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IRF3710PBF

IRF3710PBF是IR的一款MOS管|IGBT|模塊,我司不但為您提供可靠的全新原裝IRF3710PBF，還可提供IRF3710PBF應(yīng)用資料、免費(fèi)樣品及產(chǎn)品研發(fā)技術(shù)支持！詳情可致電垂詢.

元件型號(hào)：IRF3710PBF

元件品牌：IR

全新原裝正品保障，質(zhì)量是企業(yè)的生命！

采購(gòu)數(shù)量：

產(chǎn)品介紹

INTERNATIONAL RECTIFIER:IR原裝進(jìn)口MOS管IRF3710PBF IRF3710

單 N 溝道 100V 200W 130nC 功率 MosfetIRF3710PBF

制造商零件編號(hào):IRF3710PBF
安裝方法: Flange Mount
封裝形式： TO-220-3 (TO-220AB)
包裝： TUBE
標(biāo)準(zhǔn)包裝數(shù)量: 50

IRF3710PBF產(chǎn)品亮點(diǎn):

Channel Type: N-Channel
Drain-to-Source Voltage [Vdss]: 100 V
Drain-Source On Resistance-Max: 23 mΩ
Qg Gate Charge: 130 nC
Rated Power Dissipation: 200 W

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF3710PBF Features:
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating175°C Operating
TemperatureFast SwitchingFully Avalanche Rated
Lead-Free

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